A NEW ELECTROSTATICALLY ACTUATED LOW VOLTAGE RF MEMS SWITCH

  • Mohammad Bagher Fathi Department of Electrical & Electronic Engineering, East Azarbaijan Science and Research Branch, Islamic Azad University, Tabriz, Iran
  • Hadi Veladi Department of Electrical and Computer Engineering, University of Tabriz, Tabriz, East Azarbaijan, Iran
  • Saeed Golmohammadi School of Engineering Emerging Technologies, University of Tabriz, Tabriz, East Azarbaijan, Iran

Abstract

This paper describes the design and simulation of a new low voltage electrostatically actuated RF MEMS switch. The switch structure is designed in such a way that, the inherent limitation of electrostatic actuation is relaxed and the actuation voltage is as low as 3.5 V. The idea is to using a two-step electrostatic actuation mechanism instead of conventional two parallel plate electrostatic actuators. In fact the gap between switch and transmission line is reduced in two steps. In order to investigate the usefulness of the proposed idea, both mechanically and electromagnetically, FEM simulations are carried out and satisfactory results are obtained. The RF characteristics of the switch are as follow; Isolation -12 dB at 30 GHz, Insertion Loss -0.08dB at 30 GHz and return loss was below -20 dB at 30 GHz. The proposed switch in this paper can be a promising choice for low voltage high performance RF MEMS switches.

Downloads

Download data is not yet available.

Metrics

Metrics Loading ...
Published
2013-11-30
How to Cite
Fathi, M. B., Veladi, H., & Golmohammadi, S. (2013). A NEW ELECTROSTATICALLY ACTUATED LOW VOLTAGE RF MEMS SWITCH. European Scientific Journal, ESJ, 9(33). https://doi.org/10.19044/esj.2013.v9n33p%p