Ouserigha, C. E. and Benjamin, A. K. (2022) “The Effect of B, Al, N, and P Impurities on the Electronic Structure of Si0.3Sn0.7Ge alloy: A First-Principles Approach”, European Scientific Journal, ESJ, 18(3), p. 186. doi: 10.19044/esj.2022.v18n3p186.